8 fo 1 egap 00.3.ver 0030je6500sd90r mar 5, 201 3 the mark shows major revised points. the revised points can be easily searched by copying an "" in the pdf file and specifying it in the "find wha t: " field. preliminary da ta sheet ne663m04 / 2SC5509 npn silicon rf transistor for medium output power, low-noise, high-gain amplification flat-lead 4-pin thin-type super minimold (m04) fe at ur es ? idea l fo r medium outp ut p ower a mp li fi cati on ? nf = 1.2 db ty p., g a = 12 db ty p. @ v ce = 2 v, i c = 10 ma, f = 2 ghz ? maximum avai labl e power gain: mag = 14 db typ. @ v ce = 2 v, i c = 50 ma, f = 2 ghz ? f t = 25 ghz technology adopted ? flat-l ead 4-p in thin-typ e s upe r mi ni mold ( m04) pa ck age ordering information part number order number quantity p ac kage supplying form ne663m04 2SC5509 ne663m04-a 2SC5509-a 50 pcs (n on re el) ne663m04-t2 2SC5509-t2 ne663m04-t2-a 2SC5509-t2- a 3 kpcs/reel f lat -lead 4-p in t hin -ty pe su pe r minimold (m04) (pb- free) ? 8 mm wi de em boss ed taping ? pin 1 (emitter), pin 2 (collector) face the perforati on side of the tape rem ark to order eval uation sa mp les, plea se contac t yo ur ne ar by sa les office. t he unit samp le qu antity is 50 pcs. absolute maximum ratings (t c = 25 c) parameter symbol ratings unit collector to base voltage v cbo 15 v collector to emitter voltage v ceo 3.3 v emitter to base voltage v ebo 1.5 v i tnerruc rotcelloc c 100 ma to tal power di ssipati on p tot note 190 mw junc tion te mperature t j 150 c storage te mperature t stg ? 65 to + 150 c note fr ee air. thermal resistance parameter symbol ratings unit junction to case resistance r th j-c 95 c /w junction to ambient resistance r th j-a 650 c /w cau ti on observe precautions when handling because these devices are sensitive to electrostatic discharge. r09ds0056ej0300 rev.3.00 mar 5, 2013 a b usine ss par tn er o f ren esas ele ctro nics c or pora ti on. jeita part no.
ne663m04 / 2SC5509 chapter title r09ds0056ej0300 rev.3.00 page 2 of 8 mar 5, 2013 electrical characteristics (t a = +25 c) parameter symbol conditions min. typ. max. unit dc characteristics collector cut-off current i cbo v cb = 5 v, i e = 0 ? ? 600 na emitter cut-off current i ebo v eb = 1 v, i c = 0 ? ? 600 na dc current gain h fe note 1 v ce = 2 v, i c = 10 ma 50 70 100 ? rf characteristics gain bandwidth product f t v ce = 3 v, i c = 90 ma, f = 2 ghz 13 15 ? ghz insertion power gain |s 21e | 2 v ce = 2 v, i c = 50 ma, f = 2 ghz 8 11 ? db noise figure nf v ce = 2 v, i c = 10 ma, f = 2 ghz, z s = z opt ? 1.2 1.7 db reverse transfer capacitance c re note 2 v cb = 2 v, i e = 0, f = 1 mhz ? 0.5 0.75 pf maximum available power gain mag note 3 v ce = 2 v, i c = 50 ma, f = 2 ghz ? 14 ? db maximum stable power gain msg note 4 v ce = 2 v, i c = 50 ma, f = 2 ghz ? 15 ? db gain 1 db compression output power p o (1 db) v ce = 2 v, i c = 70 ma note 5 , f = 2 ghz ? 17 ? dbm 3rd order intermodulation distortion output intercept point oip 3 v ce = 2 v, i c = 70 ma note 5 , f = 2 ghz ? 27 ? dbm no tes 1. pulse measurement: pw 350 s, duty cycle 2% 2. collector to base capacitance when the emitter grounded 3. mag = 4. msg = 5. collector current when p o (1 db) is output h fe classification ra nk fb/yfb marking t80 h fe value 50 to 100 (k ? (k 2 ? 1) ) s 21 s 12 s 21 s 12 a b usine ss par tn er o f ren esas ele ctro nics c or pora ti on.
ne663m04 / 2SC5509 chapter title r09ds0056ej0300 rev.3.00 page 3 of 8 mar 5, 2013 typical characteristics (t a = +25 c, unless otherwise specified) thermal/dc characteristics v ce = 2 v collector current i c (ma) base to emitter voltage v be (v) collector current vs. base to emitter voltage 50 40 30 20 10 0 0.40.2 0.6 0.8 1.0 1.2 400 350 300 250 200 150 190 330 100 50 0 25 50 75 100 125 150 total power dissipation p tot (mw) ambient temperature t a (?c), case temperature t c (?c) total power dissipation vs. ambient temperature, case temperature when case temperature is specified mounted on ceramic substrate (15 15 mm, t = 0.6 mm) free air 200 100 150 50 0 0.01 0.1 0.001 1 10 100 dc current gain h fe collector current i c (ma) dc current gain vs. collector current v ce = 2 v collector current i c (ma) collector to emitter voltage v ce (v) collector current vs. collector to emitter voltage 150 50 100 02 14 35 200 a 100 a 300 a 400 a 500 a 600 a 700 a 800 a 900 a 1 000 a i b = 1 100 a capacitance/f t characteristics f = 1 mhz reverse transfer capacitance c re (pf) collector to base voltage v cb (v) reverse transfer capacitance vs. collector to base voltage 1.00 0.60 0.80 0.20 0.40 0 1.0 3.0 4.0 2.0 5.0 v ce = 3 v f = 2 ghz gain bandwidth product f t (ghz) collector current i c (ma) gain bandwidth product vs. collector current 30 25 20 15 10 5 0 10 100 1 1 000 remark the graphs indicate nominal characteristics. a b usine ss par tn er o f ren esas ele ctro nics c or pora ti on.
ne663m04 / 2SC5509 r09ds0056ej0300 rev.3.00 page 4 of 8 mar 5, 2013 gain characteristics v ce = 2 v i c = 50 ma frequency f (ghz) insertion power gain, mag, msg vs. frequency insertion power gain |s 21e | 2 (db) maximum available power gain mag (db) maximum stable power gain msg (db) 40 35 20 25 30 5 10 15 0 0.1 1.0 10.0 mag msg |s 21e | 2 v ce = 2 v f = 2 ghz collector current i c (ma) insertion power gain, mag, msg vs. collector current insertion power gain |s 21e | 2 (db) maximum available power gain mag (db) maximum stable power gain msg (db) 30 25 20 15 10 5 0 1 10 100 mag msg |s 21e | 2 v ce = 2 v f = 1 ghz collector current i c (ma) insertion power gain, mag, msg vs. collector current insertion power gain |s 21e | 2 (db) maximum available power gain mag (db) maximum stable power gain msg (db) 30 15 20 25 10 5 0 1 10 100 mag msg |s 21e | 2 output characteristics v ce = 2 v f = 1 ghz 25 20 15 10 5 0 ? 150 25 50 75 125 100 0 ?5 0??0 5 10 15 input power p in (dbm) output power, collector current vs. input power output power p out (dbm) collector current i c (ma) p out i c v ce = 2 v f = 2 ghz 25 20 15 10 5 0 ? 150 25 50 75 125 100 0 ?5 0??0 5 10 15 input power p in (dbm) output power, collector current vs. input power output power p out (dbm) collector current i c (ma) p out i c remark the graphs indicate nominal characteristics. a b usine ss par tn er o f ren esas ele ctro nics c or pora ti on.
ne663m04 / 2SC5509 chapter title r09ds0056ej0300 rev.3.00 page 5 of 8 mar 5, 2013 no ise characteristics 6.0 0.0 5.0 4.0 3.0 2.0 1.0 30 25 20 15 10 5 0 1 10 100 collector current i c (ma) noise figure, associated gain vs. collector current noise figure nf (db) associated gain g a (db) v ce = 2 v f = 1 ghz nf g a 6.0 0.0 5.0 4.0 3.0 2.0 1.0 30 25 20 15 10 5 0 1 10 100 collector current i c (ma) noise figure, associated gain vs. collector current noise figure nf (db) associated gain g a (db) v ce = 2 v f = 1.5 ghz nf g a 6.0 0.0 5.0 4.0 3.0 2.0 1.0 30 25 20 15 10 5 0 1 10 100 collector current i c (ma) noise figure, associated gain vs. collector current noise figure nf (db) associated gain g a (db) v ce = 2 v f = 2 ghz nf g a 6.0 0.0 5.0 4.0 3.0 2.0 1.0 30 25 20 15 10 5 0 1 10 100 collector current i c (ma) noise figure, associated gain vs. collector current noise figure nf (db) associated gain g a (db) v ce = 2 v f = 2.5 ghz nf g a remark the graphs indicate nominal characteristics. s-parameters s-parameters and noise parameters are provided on our web site in a form (s2p) that enables direct import of the parameters to microwave circuit simulators without the need for keyboard inputs. click here to download s-parameters. [products] [rf devices] [device parameters] url http://www.renesas.com/products/microwave/ a b usine ss par tn er o f ren esas ele ctro nics c or pora ti on.
ne663m04 / 2SC5509 r09ds0056ej0300 rev.3.00 page 6 of 8 mar 5, 2013 equal nf circle v ce = 2 v i c = 10 ma f = 1 ghz unstable area 3.5 db nf min = 0.95 db opt 1.5 db 3.0 db 4.0 db 2.0 db 2.5 db v ce = 2 v i c = 10 ma f = 2 ghz nf min = 1.1 db opt 2.0 db 1.5 db 2.5 db 3.5 db 4.0 db 3.0 db a b usine ss par tn er o f ren esas ele ctro nics c or pora ti on.
ne663m04 / 2SC5509 r09ds0056ej0300 rev.3.00 page 7 of 8 mar 5, 2013 noise parameters v ce = 2 v, i c = 5 ma v ce = 2 v, i c = 20 ma opt opt f (ghz) nf min (db) g a (db) mag. ang. rn/50 f (ghz) nf min (db) g a (db) mag. ang. rn/50 0.8 0.70 18.0 0.17 93.0 0.11 0.8 1.12 20.7 0.30 ? 16 4.8 0.08 0.9 0.74 17.0 0.18 103.0 0.11 0.9 1.15 19.7 0.31 ? 16 2.7 0.09 1.0 0.78 16.2 0.20 112.7 0.11 1.0 1.18 18.8 0.32 ? 16 0.7 0.09 1.5 0.98 13.6 0.32 155.4 0.09 1.5 1.31 15.7 0.39 ? 15 1.5 0.10 1.8 1.10 12.5 0.40 176.2 0.07 1.8 1.38 14.4 0.45 ? 14 6.3 0.10 1.9 1.14 12.2 0.43 ? 177.8 0.06 1.9 1.41 14.0 0.47 ? 14 4.6 0.10 2.0 1.18 11.8 0.46 ? 172.2 0.06 2.0 1.43 13.6 0.49 ? 14 2.9 0.11 2.5 1.39 9.9 0.56 ? 151.8 0.08 2.5 1.56 11.5 0.56 ? 13 3.5 0.14 v ce = 2 v, i c = 10 ma v ce = 2 v, i c = 50 ma opt opt f (ghz) nf min (db) g a (db) mag. ang. rn/50 f (ghz) nf min (db) g a (db) mag. ang. rn/50 0.8 0.87 19.6 0.13 170.3 0.09 0.8 1.75 21.3 0.49 ? 15 9.4 0.10 0.9 0.90 18.6 0.15 171.5 0.09 0.9 1.78 20.3 0.49 ? 15 7.2 0.10 1.0 0.93 17.8 0.17 173.0 0.09 1.0 1.80 19.4 0.50 ? 15 4.9 0.11 1.5 1.07 14.8 0.30 ? 174.1 0.08 1.5 1.92 16.2 0.55 ? 14 4.7 0.14 1.8 1.15 13.6 0.39 ? 164.1 0.07 1.8 2.00 14.8 0.59 ? 13 9.1 0.17 1.9 1.18 13.2 0.41 ? 160.6 0.07 1.9 2.02 14.4 0.60 ? 13 7.3 0.19 2.0 1.20 12.8 0.44 ? 157.2 0.07 2.0 2.04 13.9 0.61 ? 13 5.5 0.20 2.5 1.35 10.9 0.53 ? 142.3 0.10 2.5 2.17 11.8 0.65 ? 12 6.4 0.28 a b usine ss par tn er o f ren esas ele ctro nics c or pora ti on.
ne663m04 / 2SC5509 r09ds0056ej0300 rev.3.00 page 8 of 8 mar 5, 2013 package dimensions flat-lead 4-pin thin-type super minimold (m04) package (unit: mm) pin connections 1. emitter 2. collector 3. emitter 4. base t80 0.59?.05 0.11 +0.1 ?.05 0.60 0.65 0.65 0.65 1.30 1.25 2.0?.1 12 43 1.25?.1 2.05?.1 0.30 +0.1 ?.05 0.40 +0.1 ?.05 0.30 +0.1 ?.05 0.30 +0.1 ?.05 (1.05) 0.5 (top view) (bottom view) a b usine ss par tn er o f ren esas ele ctro nics c or pora ti on.
all trademarks and re gistered trademarks are t he property of their respective owners. c - 1 revision history ne 663m04 / 2s c5509 data sheet des cription rev. date page summary 1.00 sep 9, 2004 ? first edition issued throughout renesas format is applied to this data sheet. p.1 ordering information is modified. p.5 up to date s-parameters. 3.00 mar 5, 2013 p.8 added a drawing backside to package dimensions.
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